Datasheet

SPA06N80C3
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current
I
S
A
Diode pulse current
3)
I
S,pulse
18
Reverse diode dv /dt
5)
dv /dt
4 V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 3.9 K/W
R
thJA
leaded - - 80
Soldering temperature,
wave soldering only allowed at leads
T
sold
1.6 mm (0.063 in.)
from case for 10s
- - 260 °C
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 µA
800 - - V
Avalanche breakdown voltage
V
(BR)DS
V
GS
=0 V, I
D
=6 A
- 870 -
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=0.25 mA
2.1 3 3.9
Zero gate voltage drain current
I
DSS
V
DS
=800 V, V
GS
=0 V,
T
j
=25 °C
- - 10 µA
V
DS
=800 V, V
GS
=0 V,
T
j
=150 °C
- 50 -
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=3.8 A,
T
j
=25 °C
- 0.78 0.9
Ω
V
GS
=10 V, I
D
=3.8 A,
T
j
=150 °C
- 2.1 -
Gate resistance
R
G
f =1 MHz, open drain
- 1.2 -
Ω
Values
Thermal resistance, junction -
ambient
Value
T
C
=25 °C
6
Rev. 2.9
1 page 2 2011-09-27