Datasheet

PROFET
®
ITS 716G
Infineon Technologies AG 4 of 14 2006-Mar-23
Maximum Ratings at T
j
= 25°C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 6) V
bb
43 V
Supply voltage for full short circuit protection
T
j,start
= -40 ...+150°C
V
bb
36 V
Load current (Short-circuit current, see page 6) I
L
self-limited A
Load dump protection
1)
V
LoadDump
= V
A
+ V
s
, V
A
= 13.5 V
R
I
2)
= 2 Ω, t
d
= 400 ms; IN = low or high,
each channel loaded with R
L
= 13.5 Ω,
V
Load dump
3
)
60 V
Junction temperature
Operating temperature range
Storage temperature range
T
j
T
a
T
stg
+150
-30 ...+85
-40 ...+105
°C
Power dissipation (DC)
4)
T
a
= 25°C:
(all channels active)
T
a
= 85°C:
P
tot
3.6
1.9
W
Maximal switchable inductance, single pulse
V
bb
= 12V, T
j,start
= 150°C
4)
, see diagrams on page 10
I
L
= 2.3 A, E
AS
= 76 mJ, 0 Ω one channel:
I
L
= 3.3 A, E
AS
= 182 mJ, 0 Ω two parallel channels:
I
L
= 4.7 A, E
AS
= 460 mJ, 0 Ω four parallel channels:
Z
L
21
25
30
mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
V
ESD
1.0
4.0
8.0
kV
Input voltage (DC) see internal circuit diagram page 9 V
IN
-10 ... +16 V
Current through input pin (DC)
Pulsed current through input pin
5)
Current through status pin (DC)
I
IN
I
IN
I
ST
±0.3
±5.0
±5.0
mA
1)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2)
R
I
= internal resistance of the load dump test pulse generator
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air. See page 14
5)
only for testing