Datasheet

ManualsBrandsInfineon ManualsDiscrete SemiconductorsIGBT Module 1.2kV 20mW

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Technische Information / technical information

FS50R12KE3

IGBT-Module

IGBT-Modules

2,345E-03

Transienter Wärmewiderstand Z

thJC

= f (t)

3

2,032E-01

2,820E-02 1,128E-012,820E-01

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA)

V

GE

=±15V, R

G

=18Ω, T

vj

=125°C

i

r

i

[K/W] : IGBT

τ

i

[s] : IGBT

r

i

[K/W] : Diode

τ

i

[s] : Diode

1

5,077E-02

7,662E-01

7,637E-02

3,333E-03

4,933E-01

3,429E-02

1,421E-01

1,294E-01

4,501E-02

1,142E-01

2

7,893E-02

4

Transient thermal impedance

0,01

0,1

1

0,001 0,01 0,1 1 10

t [s]

Z

thJC

[K/W]

Zth : IGBT

Zth : Diode

0

25

50

75

100

125

0 200 400 600 800 1000 1200 1400

V

CE

[V]

I

C

[A]

IC,Chip

IC,Modul

7 (8)

DB_FS50R12KE3_ 3.0.xls

2002-09-03