Datasheet

Technische Information / technical information
FS50R12KE3
IGBT-Module
IGBT-Modules
min. typ. max.
- 0,09 - µs
- 0,09 - µs
- 0,03 - µs
- 0,05 - µs
- 0,42 - µs
- 0,52 - µs
- 0,07 - µs
- 0,09 - µs
- 1,65 2,15 V
- 1,65 - V
- 67 -
A
- 70 -
A
- 5,6 -
µC
- 9,9 -
µC
- 2,2 -
mJ
- 4,1 -
mJ
Sperrverzögerungsladung
recovered charge
I
F
= 50A, -di
F
/dt= 1900A/µs
Kurzschlussverhalten
t
P
≤ 10µs, V
GE
≤ 15V, T
Vj
≤ 125°C
I
SC
- 200 - A
SC data
V
CC
= 900V, V
CEmax
= V
CES
- L
σCE
·di/dt
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
Fallzeit (induktive Last)
fall time (inductive load)
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 125°C
- nH
stray inductance module
Modulinduktivität
L
σCE
-
Diode Wechselrichter / diode inverter
2,5
Q
r
Ausschaltenergie pro Puls
reverse recovery energy
E
rec
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
I
F
= 50A, -di
F
/dt= 1900A/µs
19
turn off energy loss per pulse
E
off
I
C
= 50A, V
CC
= 600V, L
σ
= 70nH
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 125°C
- 6,5
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
R
CC´/EE´
T
c
= 25°C
- mJ
- mJ
E
on
I
C
= 50A, V
CC
= 600V, L
σ
= 70nH
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 125°C
I
C
= 50A, V
CC
= 600V
t
d,off
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 125°C
I
C
= 50A, V
CC
= 600V
mΩ
Charakteristische Werte / characteristic values
I
C
= 50A, V
CC
= 600V
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 25°C
- -
t
f
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 125°C
- 5,0
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
V
F
forward voltage
Rückstromspitze
peak reverse recovery current
I
RM
Charakteristische Werte / characteristic values
I
F
= 50A, V
GE
= 0V, T
vj
= 25°C
I
F
= 50A, V
GE
= 0V, T
vj
= 125°C
Einschaltverzögerungszeit (induktive Last)
turn on delay time (inductive load)
V
GE
= ±15V, R
G
= 18Ω, T
vj
= 125°C
Abschaltverzögerungszeit (induktive Last)
turn off delay time (inductive load)
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Transistor Wechselrichter / transistor inverter
t
d,on
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 50A, V
CC
= 600V
t
r
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
I
F
= 50A, -di
F
/dt= 1900A/µs
Durchlassspannung
2 (8)
DB_FS50R12KE3_ 3.0.xls
2002-09-03