Datasheet

BSP 295
Data Sheet 2 05.99
Maximum Ratings
Parameter
Symbol Values Unit
Chip or operating temperature T
j
-55 ... + 150 ˚C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip to ambient air R
thJA
≤ 70 K/W
Therminal resistance, junction-soldering point
1)
R
thJS
≤
10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at T
j
= 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA, T
j
= 25 ˚C
V
(BR)DSS
50 - -
V
Gate threshold voltage
V
GS
=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8 1.4 2
Zero gate voltage drain current
V
DS
= 50 V, V
GS
= 0 V, T
j
= 25 ˚C
V
DS
= 50 V, V
GS
= 0 V, T
j
= 125 ˚C
V
DS
= 30 V, V
GS
= 0 V, T
j
= 25 ˚C
I
DSS
-
-
-
-
8
0.1
100
50
1 µA
nA
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
- 10 100
nA
Drain-Source on-state resistance
V
GS
= 10 V, I
D
= 1.8 A
V
GS
= 4.5 V, I
D
= 1.8 A
R
DS(on)
-
-
0.45
0.25
0.5
0.3
Ω