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Datasheet

ManualsBrandsInfineon ManualsDiscrete SemiconductorsIGBT module 34 mm 1.2 kV
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5 Oct-21-1997
BSM 75 GB 120 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter: t
p
= 80 µs, T
j
= 25 °C
0 1 2 3 V 5
V
CE
0
10
20
30
40
50
60
70
80
90
100
110
120
130
A
150
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter: t
p
= 80 µs, T
j
= 125 °C
0 1 2 3 V 5
V
CE
0
10
20
30
40
50
60
70
80
90
100
110
120
130
A
150
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter: t
p
= 80 µs, V
CE
= 20 V
0 2 4 6 8 10 V 14
V
GE
0
10
20
30
40
50
60
70
80
90
100
110
120
130
A
150
I
C