Datasheet

4 Oct-21-1997
BSM 75 GB 120 DN2
Power dissipation
P
tot
= ƒ(T
C
)
parameter: T
j
≤ 150 °C
0 20 40 60 80 100 120 °C 160
T
C
0
50
100
150
200
250
300
350
400
450
500
550
W
650
P
tot
Safe operating area
I
C
= ƒ(V
CE
)
parameter: D = 0, T
C
= 25°C , T
j
≤ 150 °C
-1
10
0
10
1
10
2
10
3
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 µs
t
p
= 19.0µs
Collector current
I
C
=
ƒ
(T
C
)
parameter: V
GE
≥
15 V , T
j
≤
150 °C
0 20 40 60 80 100 120 °C 160
T
C
0
10
20
30
40
50
60
70
80
90
100
A
120
I
C
Transient thermal impedance IGBT
Z
th JC
=
ƒ
(t
p
)
parameter: D = t
p
/ T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50