Datasheet

6 Oct-27-1997
BSM 300 GA 120 DN2
Typ. gate charge
V
GE
= ƒ(Q
Gate
)
parameter: I
C puls
= 300 A
0 200 400 600 800 1000120014001600 nC 2000
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V600 V
Typ. capacitances
C = f (V
CE
)
parameter: V
GE
= 0 V, f = 1 MHz
0 5 10 15 20 25 30 V 40
V
CE
-1
10
0
10
1
10
2
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
I
Cpuls
= f(V
CE
)
,
T
j
= 150°C
parameter: V
GE
= ± 15 V, t
p
≤ 1 ms, L < 20 nH
0 200 400 600 800 1000 1200 V 1600
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
I
C
di/dt =
1000A/µs
3000A/µs
5000A/µs
Short circuit safe operating area
I
Csc
= f(V
CE
) , T
j
= 150°C
parameter: V
GE
= ± 15 V, t
SC
≤ 10 µs, L < 20 nH
0 200 400 600 800 1000 1200 V 1600
V
CE
0
2
4
6
8
12
I
Csc
/I
C
circuit: >1s
° time between short
short circuit: <1000
° allowed number of
di/dt = 1000A/µs
3000A/µs
5000A/µs