Datasheet

4 2006-01-31
BSM 25 GD 120 DN2
Power dissipation
P
tot
= ƒ(T
C
)
parameter: T
j
≤ 150 °C
0 20 40 60 80 100 120 °C 160
T
C
0
20
40
60
80
100
120
140
160
180
W
220
P
tot
Safe operating area
I
C
= ƒ(V
CE
)
parameter: D = 0, T
C
= 25°C , T
j
≤ 150 °C
-1
10
0
10
1
10
2
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 µs
t
p
= 11.0µs
Collector current
I
C
=
ƒ
(T
C
)
parameter: V
GE
≥
15 V , T
j
≤
150 °C
0 20 40 60 80 100 120 °C 160
T
C
0
4
8
12
16
20
24
28
32
A
40
I
C
Transient thermal impedance IGBT
Z
th JC
=
ƒ
(t
p
)
parameter: D = t
p
/ T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50