Datasheet

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BFR92P

Aug-03-20011

NPN Silicon RF Transistor



For broadband amplifiers up to 2 GHz and

fast non-saturated switches at collector currents

from 0.5 mA to 20 mA



Complementary type: BFT 92 (PNP)

VPS05161

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR92P GFs 1 = B 2 = E 3 = C SOT23

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V

CEO

15 V

Collector-emitter voltage V

CES

Collector-base voltage V

CBO

Emitter-base voltage V

EBO

2.5

Collector current I

30 mA

Base current I

Total power dissipation



48 °C

tot

280 mW

Junction temperature T

150 °C

Ambient temperature T

-65 ... 150

Storage temperature T

-65 ... 150

Thermal Resistance

Junction - soldering point

thJS



365

K/W

is measured on the collector lead at the soldering point to the pcb

For calculation of R

thJA

please refer to Application Note Thermal Resistance

Summary of content (7 pages)

PAGE 1
BFR92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.
PAGE 2
BFR92P Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 100 µA hFE 40 100 200 - DC characteristics V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.
PAGE 3
BFR92P Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 3.5 5 - Ccb - 0.38 0.6 Cce - 0.2 - Ceb - 0.7 - AC characteristics (verified by random sampling) fT Transition frequency GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.
PAGE 4
BFR92P SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.1213 fA BF = 94.733 - NF = 1.0947 - VAF = 30 V IKF = 0.46227 A ISE = 129.55 fA NE = 1.9052 - BR = 10.729 - NR = 0.8983 - VAR = 14.599 V IKR = 0.01 A ISC = 0.75557 fA NC = 1.371 - RB = 14.998 IRB = 0.01652 mA RBM = 7.8145 RE = 0.29088 RC = 0.13793 CJE = 10.416 fF VJE = 0.70618 V MJE = 0.34686 TF = 26.796 ps XTF = 0.3817 - VTF = 0.
PAGE 5
BFR92P Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.
PAGE 6
BFR92P Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 1.3 pF 6 GHz 1.1 5 4.5 5V 0.9 fT Ccb 1 0.8 4 3V 3.5 0.7 3 2V 0.6 2.5 0.5 2 0.4 1.5 0.3 0.2 1 0.1 0.5 0 0 4 8 12 16 V 0 0 22 1V 0.7V 5 10 15 20 25 mA VCB IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.
PAGE 7
BFR92P Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) = Parameter, f = 900MHz 1) V |S21|2 = f(VCE):--------f = Parameter CE 16 26 0.9GHz IC=15mA dBm dB 8V 5V 0.9GHz 22 12 3V IP 3 G 20 1.8GHz 10 18 2V 8 16 1.