Datasheet

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BCR116

Nov-29-20011

NPN Silicon Digital Transistor



Switching circuit, inverter, interface circuit,

driver circuit



Built in bias resistor (R

=4.7k



, R

=47k



)

VPS05161

EHA07184

Type Marking Pin Configuration Package

BCR116 WGs 1 = B 2 = E 3 = C SOT23

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

CEO

V50

CBO

Collector-base voltage

Emitter-base voltage 5

EBO

Input on Voltage

i(on)

100 mA

DC collector current

Total power dissipation, T

= 102 °C P

tot

mW200

Junction temperature

150 °C

-65 ... 150Storage temperature

Thermal Resistance

Junction - soldering point

thJS



240 K/W

For calculation of R

thJA

please refer to Application Note Thermal Resistance

Summary of content (4 pages)

PAGE 1
BCR116 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.
PAGE 2
BCR116 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 155 µA hFE 70 - - - - 0.3 Vi(off) 0.4 - 0.8 Vi(on) 0.5 - 1.4 Input resistor R1 3.2 4.7 6.2 k Resistor ratio R1 /R2 0.09 0.1 0.
PAGE 3
BCR116 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 10 0 0.0 2 0.2 0.4 V 0.6 IC 1.0 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.
PAGE 4
BCR116 Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.