BC817.../ BC818... NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807.../W, BC808...
BC817.../ BC818... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC817... 45 BC818... 25 Collector-base voltage Unit VCBO BC817... 50 BC818... 30 5 Emitter-base voltage VEBO Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 500 1000 mW TS ≤ 79 °C, BC817, BC818 330 TS ≤ 115 °C, BC817K, BC818K 500 TS ≤ 130 °C, BC817W / KW, BC818...
BC817.../ BC818... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC817... 45 - - IC = 10 mA, IB = 0 , BC818... 25 - - Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC817... 50 - - IC = 10 µA, IE = 0 , BC818...
BC817.../ BC818... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. - 170 - AC Characteristics Transition frequency fT MHz IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance pF Ccb VCB = 10 V, f = 1 MHz1) - 6 - VCB = 10 V, f = 1 MHz2) - 3 - VEB = 0.5 V, f = 1 MHz1) - 60 - VEB = 0.
BC817.../ BC818... DC current gain hFE = ƒ(IC) VCE = 1 V DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp.16 h FE-grp.25 h FE 10 3 h FE 10 3 10 2 10 2 105 °C 85 °C 65 °C 25 °C -40 °C 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 1 -5 10 0 A 10 10 -4 10 -3 10 -2 10 IC DC current gain hFE = ƒ(IC) VCE = 1 V -1 0 A 10 IC Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 h FE-grp.
BC817.../ BC818... Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 BC 817/818 10 3 ΙC EHP00222 10 5 mA Ι CBO 150 ˚C 25 ˚C -50 ˚C 10 2 BC 817/818 EHP00221 nA 10 4 5 max 10 3 10 1 5 typ 10 2 10 0 10 1 5 10 -1 0 1.0 2.0 3.0 V 10 0 4.
BC817.../ BC818...
BC817.../ BC818... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BC817W / KW, BC818W / KW Ptotmax/P totDC = ƒ(tp) BC817W / KW, BC818W / KW 10 3 10 3 P totmax/P totDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.
Package SOT23 BC817.../ BC818... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.
Package SOT323 BC817.../ BC818... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.
BC817.../ BC818... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).