Datasheet

BAV 70

Oct-07-19991

Silicon Switching Diode Array

• For high-speed switching applications

• Common cathode

VPS05161

EHA07004

Type Marking Pin Configuration Package

BAV 70 A4s 1 = A1 2 = A2 3 = C1/2 SOT-23

Maximum Ratings

Parameter ValueSymbol Unit

VDiode reverse voltage

Peak reverse voltage 70

200 mAForward current

A4.5

Surge forward current, t = 1 µs I

Total power dissipation, T

= 35 °C P

tot

250 mW

150Junction temperature °C

-65 ... 150Storage temperature

Thermal Resistance

≤ 600

K/WJunction - ambient

thJA

thJS

Junction - soldering point

≤ 460

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm

PAGE 1
BAV 70 Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.
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BAV 70 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 70 - - DC characteristics Breakdown voltage V(BR) V I(BR) = 100 µA Forward voltage mV VF IF = 1 mA - - 715 IF = 10 mA - - 855 IF = 50 mA - - 1000 IF = 150 mA - - 1250 - - 2.5 VR = 25 V, TA = 150 °C - - 30 VR = 75 V - - 50 CD - - 1.
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BAV 70 Forward current IF = f (TA *;TS ) Reverse current IR = f (TA) * Package mounted on epoxy 300 BAV 70 EHB00064 ΙR ΙF BAV 70 10 5 nA EHB00065 mA V R = 70 V 10 4 max. 5 200 70V 10 3 TA 25V 5 TS 100 typ. 10 2 5 0 0 50 100 ˚C 10 1 150 0 50 100 TA ; TS Forward current IF = f (VF ) Peak forward current IFM = f (t p) TA = 25°C TA = 25°C 150 BAV 70 ˚C 150 TA EHB00066 10 2 Ι FM Ι F mA BAV 70 EHB00067 D = 0.005 0.01 0.02 0.05 0.1 0.
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BAV 70 Forward voltage VF = f (TA) 1.0 VF BAV 70 V EHB00068 Ι F = 100 mA 10 mA 1 mA 0.5 0.