Datasheet

Data Sheet 21 Rev. 1.2, 2007-11-13
TLE7269G
Electrical Characteristics
6 Electrical Characteristics
6.1 Functional Device Characteristics
Table 7 Electrical Characteristics
7.0 V <
V
S
< 27 V; R
L
= 500 Ω; V
io
= 5V; -40 °C < T
j
< 125 °C; all voltages with respect to ground; positive current
flowing into pin; unless otherwise specified.
Pos. Parameter Symbol Limit Values Unit Remarks
Min. Typ. Max.
Current Consumption
6.1.1 Current consumption at
V
S
(both channels recessive)
I
S,rec
0.5 1.6 3.0 mA recessive state, without R
L
;
V
S
= 13.5 V
V
TxD
= V
io
6.1.2 Current consumption normal
mode at V
io
I
VIO,norm
– 10 50 µA Normal Operation mode.
V
IO
=5 V
6.1.3 Current consumption
at
V
S
(both channels
dominant)
I
S,dom
– 3 5.0 mA dominant state, without R
L
;
V
S
= 13.5 V;
V
TxD
= 0 V
6.1.4 Current consumption
in sleep mode at V
io
I
VIO,Sleep
– 1 10 µA Sleep mode, V
IO
=5 V
6.1.5 Current consumption
in sleep mode
I
S,Sleep
–712µA Sleep mode,
V
S
= 18 V;
V
BUS
= V
WK
= V
S
;
6.1.6 Current consumption in sleep
mode
I
S,Sleep,typ
– 5 10 µA Sleep mode, T
j
< 85 °C;
V
S
= 13.5 V;
V
WK
= V
S
= V
BUS
;
Under Voltage Detection
6.1.7 Blocking under voltage
detection at
V
S
(V
S
on the falling edge)
V
s,UV,BLK
3.5 – 5 V Communication blocked
no reset (see Figure 11)
6.1.8 Power ON under voltage
detection at
V
S
V
s,UV,PON
– – 3.5 V Device reset to Stand-By-
Mode
1)
(see Figure 11)
6.1.9 Under voltage detection at
V
IO
V
IO,UV
1.5 2.5 3 V Communication blocked
no reset (see Figure 11)
6.1.10 Under voltage blanking time t
blankUV
–5–µs
1)
Receiver Outputs: RxD1, RxD2
6.1.11 HIGH level output current
I
RD,H
–10 -4 -2 mA V
RD
= 0.8 × V
IO
6.1.12 LOW level output current I
RD,L
2410mAV
RD
= 0.2 × V
IO