Datasheet

Data Sheet 19 Rev. 1.2, 2007-11-13
TLE7269G
General Product Characteristics
5 General Product Characteristics
5.1 Absolute Maximum Ratings
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Table 4 Absolute Maximum Ratings
1)
All voltages with respect to ground; positive current flowing into pin;
(unless otherwise specified)
1) Not subject to production test, specified by design
Pos. Parameter Symbol Limit Values Unit Remarks
Min. Max.
Voltages
5.1.1 Battery supply voltage
V
S
-0.3 40 V LIN Spec 2.1 Param. 10
5.1.2 Logic supply voltage
V
IO
-0.3 5.5 V –
5.1.3 Bus and WK input voltage
versus GND
versus
V
S
V
BUS,G
V
BUS,Vs
-40
-40
40
40
V
V
–
5.1.4 Logic voltages at EN, W2O,
TxD1, TxD2, RxD1, RxD2
V
logic
-0.3 5.5 V –
5.1.5 INH1, INH2 voltage
versus GND
versus
V
S
V
INH,G
V
INH,Vs
-0.3
-40
40
0.3
V
V
–
Currents
5.1.6 Output current at INH1,
INH2
I
INH
-150 80 mA
2)
2) Output current is internally limited to -150 mA
Temperatures
5.1.7 Junction temperature
T
j
-40 150 °C–
5.1.8 Storage temperature
T
s
-55 150 °C–
ESD Resistivity
5.1.9 Electrostatic discharge
voltage at
V
S
, BUS1, BUS2,
WK versus GND
V
ESD
-6 6 kV Human Body Model
(100pF via 1.5 kΩ)
3)
3) ESD susceptibility HBM according to EIA / JESD 22-A 114
5.1.10 Electrostatic discharge
voltage W2O versus
V
S
V
ESD
-1 1 kV Human Body Model
(100pF via 1.5 kΩ)
3)
5.1.11 Electrostatic discharge
voltage all pins except W2O
versus
V
S
V
ESD
-2 2 kV Human Body Model
(100pF via 1.5 kΩ)
3)