Datasheet

PG-DSO-8
Type Package Marking
TLE7259-2GE PG-DSO-8 7259-2GE
Data Sheet 3 Rev. 1.5, 2013-07-26
LIN Transceiver TLE7259-2GE
1Overview
Features
• Single-wire transceiver, pin compatible to the TLE7259-2GU
• Transmission rate up to 20 kBaud
• Compliant to LIN specification 1.3, 2.0, 2.1, 2.2 and 2.2A
• Very high ESD robustness, +/- 11 kV according to IEC61000-4-2
• Optimized for low electromagnetic emission (EME)
• Optimized for high immunity against electromagnetic interference (EMI)
• Very low current consumption in sleep mode with Wake-Up functions
• Wake-Up source detection
• Very low leakage current on the BUS output
• Digital I/O levels compatible for 3.3 V and 5 V microcontrollers
• Suitable for 12 V and 24 V board net
• Bus short to V
BAT
protection and Bus short to GND handling
• Over temperature protection and Under voltage detection
• Flash mode
• Green Product (RoHS compliant)
• AEC Qualified
Description
The TLE7259-2GE is a transceiver for the Local Interconnect Network (LIN) with integrated Wake-Up and
protection features. It is designed for in-vehicle networks using data transmission rates from 2.4 kBaud to
20 kBaud. The TLE7259-2GE functions as a bus driver between the protocol controller and the physical bus inside
the LIN network. Compliant to all LIN standards and with a wide operational supply range the TLE7259-2GE can
be used in all automotive applications.
Different operation modes and the INH output allow the TLE7259-2GE to control external components, like voltage
regulators. In Sleep-mode the TLE7259-2GE draws less than 8 μA of quiescent current while still being able to
wake up off of LIN bus traffic and a local Wake-Up input. The very low leakage current on the BUS pin makes the
TLE7259-2GE especially suitable for partially supplied networks and supports the low quiescent current
requirements of the LIN network.
Based on the Infineon Smart Power Technology SPT
®
, the TLE7259-2GE provides excellent ESD Robustness
together with a very high electromagnetic immunity (EMI). The TLE7259-2GE reaches a very low level of
electromagnetic emission (EME) within a broad frequency range and independent from the battery voltage.
The Infineon Smart Power Technology SPT
®
allows bipolar and CMOS control circuitry in accordance with DMOS
power devices existing on the same monolithic circuit. The TLE7259-2GE and the Infineon SPT
®
technology are
AEC qualified and tailored to withstand the harsh condition of the Automotive Environment.