Datasheet

Data Sheet 18 Rev. 1.5, 2013-07-26
TLE7259-2GE
Electrical Characteristics
6 Electrical Characteristics
6.1 Functional Device Characteristics
Table 6 Electrical Characteristics
5.5 V < V
S
< 27 V; R
L
= 500 Ω; -40 °C < T
j
< 150 °C; all voltages with respect to ground; positive current flowing
into pin; unless otherwise specified.
Pos. Parameter Symbol Limit Values Unit Remarks
Min. Typ. Max.
Current Consumption
6.1.1 Current consumption at V
S
I
S,rec
0.5 1.1 3.0 mA Recessive state, without R
L
;
V
S
= 13.5 V; V
TxD
= “High”
6.1.2 Current consumption at
V
S
Dominate State
I
S,dom
–1.55.0mA Dominant state , without R
L
;
V
S
= 13.5 V; V
TxD
= 0 V
6.1.3 Current consumption at
V
S
in sleep mode
I
S,sleep
– 5 12 µA Sleep mode.
V
S
= 18 V; V
WK
= V
S
= V
BUS
6.1.4 Current consumption at V
S
in
sleep mode
I
S,sleep,typ
– – 10 µA Sleep mode, T
j
< 85 °C
V
S
= 13.5 V; V
WK
= V
S
= V
BUS
6.1.5 Current consumption in sleep
mode bus shorted to GND
I
S,lkg,SC_GND
– 45 100 µA Sleep mode,
V
S
= 13.5 V;V
BUS
= 0V
Receiver Output: RxD
6.1.6 HIGH level leakage current I
RD,H,leak
-5 – 5 µA V
RxD
= 5V; V
BUS
= V
S
6.1.7 LOW level output current I
RD,L
1.7 – 10 mA V
RxD
= 0.9V, V
BUS
= 0V
Transmission Input: TxD
6.1.8 HIGH level input voltage range V
TD,H
2 – 5.5 V Recessive state
6.1.9 Input hysteresis
V
TD,hys
150 300 450 mV
1)
6.1.10 LOW level input voltage range
V
TD,L
-0.3 – 0.8 V Dominant state
6.1.11 Pull-down res istance
R
TD
100 350 800 kΩ V
TxD
= High
6.1.12 Dominant current standby
mode after Wake-Up
I
TD,L
1.5 3 10 mA V
TxD
= 0.9 V; V
WK
= 0 V;
V
S
= 13.5 V
6.1.13 Input capacitance
C
i
–5–pF
1)