Datasheet

TLE7250GVIO
Electrical Characteristics
Data Sheet 15 Rev. 1.0, 2012-03-14
7 Electrical Characteristics
7.1 Functional Device Characteristics
Table 6 Electrical Characteristics
4.75 V <
V
CC
< 5.25 V; 3.0 V < V
IO
< 5.25 V; R
L
=60Ω; -40 °C<T
j
< +150 °C; all voltages with respect to ground;
positive current flowing into the pin; unless otherwise specified.
Pos. Parameter Symbol Limit Values Unit Remarks
Min. Typ. Max.
Current Consumption
7.1.1 Current consumption at
V
CC
I
CC
2 6 mA “recessive” state;
V
TxD
= V
IO
7.1.2 Current consumption at V
CC
I
CC
35 60 mA “dominant” state;
V
TxD
= “low”
7.1.3 Current consumption at
V
IO
I
IO
0.2 1 mA normal-operating mode;
NEN = “low”
7.1.4 Current consumption
stand-by mode
I
CC(STB)
–4 15μA V
CC
=V
IO
=5V,
TxD =
V
IO
, NEN = V
IO
7.1.5 Current consumption
stand-by mode
I
IO(STB)
–2 10μA V
CC
=V
IO
=5V,
TxD =
V
IO
, NEN = V
IO
Supply Reset
7.1.6
V
CC
undervoltage monitor V
CC(UV)
1.3 3.2 4.3 V
7.1.7
V
CC
undervoltage monitor
hysteresis
V
CC(UV,H)
400 mV
1)
7.1.8 V
IO
undervoltage monitor V
IO(UV)
1.0 2.4 3.0 V
7.1.9
V
IO
undervoltage monitor
hysteresis
V
IO(UV,H)
200 mV
1)
7.1.10
V
CC
and V
IO
undervoltage
delay time
t
Delay(UV)
–– 50μs
1)
(see Figure 6)
Receiver Output: RxD
7.1.11 “High” level output current
I
RD,H
–-4-2mAV
RxD
= V
IO
-0.4V,
V
DIFF
<0.5V
7.1.12 “Low” level output current
I
RD,L
24 mAV
RxD
=0.4V,
V
DIFF
> 0.9 V
Transmission Input: TxD
7.1.13 “High” level input voltage
threshold
V
TD,H
–0.5 ×
V
IO
0.7 ×
V
IO
V “recessive” state
7.1.14 “Low” level input voltage
threshold
V
TD,L
0.3 ×
V
IO
0.4 ×
V
IO
V “dominant” state
7.1.15 TxD pull-up resistance
R
TD
10 25 50 kΩ
7.1.16 TxD input hysteresis
V
HYS(TxD)
800 mV
1)
7.1.17 TxD permanent “dominant”
disable time
t
TxD
0.3 1.0 ms