Datasheet

Data Sheet 24 Rev. 1.1, 2011-06-06
TLE6251-3G
General Product Characteristics
9 General Product Characteristics
9.1 Absolute Maximum Ratings
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Table 4 Absolute Maximum Ratings
1)
All voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
1) Not subject to production test, specified by design.
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
Voltages
9.1.1 Supply voltage
V
S
-0.3 40 V –
9.1.2 Transceiver supply voltage
V
CC
-0.3 6.0 V –
9.1.3 Logic supply voltage
V
IO
-0.3 6.0 V –
9.1.4 CANH DC voltage versus GND
V
CANH
-40 40 V –
9.1.5 CANL DC voltage versus GND
V
CANL
-40 40 V –
9.1.6 Input voltage at WK
V
WK
-27 40 V –
9.1.7 Input voltage at INH
V
INH
-0.3 V
S
+ 0.3 V –
9.1.8 Differential voltage CANH to
CANL
V
Diff,CAN
-40 40 V Max. differential voltage
between CAN and CANL
9.1.9 Logic voltages at EN, NSTB,
NERR, TxD, RxD
V
Logic
-0.3
V
IO
V0 V<V
IO
< 6.0 V
Currents
9.1.10 Maximum Output Current INH
I
INH(max)
-5 0 mA –
Temperatures
9.1.11 Junction Temperature
T
j
-40 150 °C–
9.1.12 Storage Temperature
T
stg
-55 150 °C–
ESD Susceptibility
9.1.13 ESD Resistivity at CANH, CANL,
and WK versus GND
V
ESD
-8 8 kV HBM
2)
(100 pF / 1.5 kΩ)
2) ESD susceptibility, HBM according to AEC-Q100-002D.
9.1.14 ESD Resistivity all other pins V
ESD
-2 2 kV HBM
2)
(100 pF / 1.5 kΩ)