Datasheet
2011-09-30
1
SMBT2907A/MMBT2907A
1
2
3
PNP Silicon Switching Transistor
• Low collector-emitter saturation voltage
• Complementary type:
SMBT2222A / MMBT2222A (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT2907A/MMBT2907A s2F
1 = B 2 = E 3 = C
SOT23
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
CEO
60 V
Collector-base voltage V
CBO
60
Emitter-base voltage V
EBO
5
Collector current I
C
600 mA
Base current I
B
100
Peak base current I
BM
200
Total power dissipation
T
S
≤ 77 °C
P
tot
330 mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
≤ 220
K/W
1
For calculation of R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)