Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsN/A NPN I(C) 600 mA NPN I(C) 600 mA

2011-08-19

SMBT2222A/MMBT2222A

NPN Silicon Switching Transistor

• Low collector-emitter saturation voltage

• Complementary type:

SMBT2907A / MMBT2907A (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

SMBT2222A/MMBT2222A s1P

1 = B 2 = E 3 = C

SOT23

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V

CEO

40 V

Collector-base voltage V

CBO

Emitter-base voltage V

EBO

Collector current I

600 mA

Total power dissipation-

≤ 77 °C

tot

330 mW

Junction temperature T

150 °C

Storage temperature T

-65 ... 150

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

thJS

≤ 220

K/W

For calculation of R

thJA

please refer to Application Note AN077 (Thermal Resistance Calculation)

Summary of content (8 pages)

PAGE 1
SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 75 Emitter-base voltage VEBO 6 Collector current IC 600 mA Total power dissipat
PAGE 2
SMBT2222A/MMBT2222A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 Unit V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 75 - - V(BR)EBO 6 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 60 V, IE = 0 - - 0.
PAGE 3
SMBT2222A/MMBT2222A Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 300 - - MHz Ccb - 2.5 5 pF Ceb - - 35 AC Characteristics Transition frequency fT IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e kΩ IC = 1 mA, VCE = 10 V, f = 1 kHz 2 - 8 IC = 10 mA, VCE = 10 V, f = 1 kHz 0.25 - 1.
PAGE 4
SMBT2222A/MMBT2222A Test circuit Delay and rise time 30 V 200 Ω Osc. 619 Ω 9.9 V 0 0.5 V EHN00055 Storage and fall time 30 V ~100 µ s 200 Ω < 5 ns Osc. 16.2 V 1 kΩ 0 -13.8 V ~ 500 µ s -3.
PAGE 5
SMBT2222A/MMBT2222A DC current gain hFE = ƒ(IC) Saturation voltage IC = ƒ(VBEsat ; VCEsat) VCE = 10 V hFE = 10 10 3 SMBT 2222/A EHP00743 SMBT 2222/A 10 3 EHP00742 mA h FE ΙC 5 VCE 10 2 150 ˚C VBE 5 25 ˚C 10 2 10 1 5 -50 ˚C 5 10 0 5 10 1 -1 10 10 0 10 1 2 10 ΙC mA 10 0.2 0.4 0.6 1.0 V 1.2 0.
PAGE 6
SMBT2222A/MMBT2222A Total power dissipation P tot = ƒ(TS) Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 3 360 mW SMBT 2222/A EHP00740 Ptot max 5 Ptot DC 300 tp tp D= T T Ptot 270 10 2 240 210 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.
PAGE 7
Package SOT23 SMBT2222A/MMBT2222A 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.
PAGE 8
SMBT2222A/MMBT2222A Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.