Datasheet
Si4435DY
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 34 51 ns T
J
= 25°C, I
F
= -2.5A
Q
rr
Reverse Recovery Charge ––– 33 50 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-50
–––
–––
–––
-2.5
–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.019 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.015 0.020 V
GS
= -10V, I
D
= -8.0A
––– 0.026 0.035 V
GS
= -4.5V, I
D
= -5.0A
V
GS(th)
Gate Threshold Voltage -1.0 ––– ––– V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance ––– 11 ––– S V
DS
= -15V, I
D
= -8.0A
––– ––– -10 V
DS
= -24V, V
GS
= 0V
––– ––– -10 V
DS
= -15V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 40 60 I
D
= -4.6A
Q
gs
Gate-to-Source Charge ––– 7.1 ––– nC V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 8.0 ––– V
GS
= -10V
t
d(on)
Turn-On Delay Time ––– 16 24 V
DD
= -15V, V
GS
= -10V
t
r
Rise Time ––– 76 110 I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 130 200 R
G
= 6.0Ω
t
f
Fall Time ––– 90 140 R
D
= 15Ω
C
iss
Input Capacitance ––– 2320 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 390 ––– pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0kHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns