Datasheet

Si4410DYPbF
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Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 13. Typical On-Resistance Vs. Gate
Voltage
0.00
0.04
0.08
0.12
0.16
0.20
01020304050
A
I , Drain Current (A)
D
R , Drain-to-Source On Resistance
DS(on)
(Ω)
V = 10V
GS
V = 4.5V
GS
0.00
0.01
0.02
0.03
345678910
A
R , Drain-to-Source On Resistance
DS(on)
(Ω)
GS
V , Gate-to-Source Voltage (V)
I = 10A
D
Fig 14. Typical Threshold Voltage Vs.Temperature
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
A
GS(th)
V , Variance ( V)
I =250µA
D
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
4.5A
8.0A
10A