Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsPMICsPMIC - ELCs High side TO 252 5

2006-03-22

Page 1

ITS 4141D

Smart High-Side Power Switch

for Industrial Applications

1 Channel: 1 x 200mΩ

Features

• Short circuit protection

• Current limitation

• Overload protection

• Overvoltage protection

(including load dump)

• Undervoltage shutdown with auto-

restart and hysteresis

• Switching inductive loads

• Clamp of negative voltage at output

with inductive loads

• CMOS compatible input

• Thermal shutdown with restart

• ESD - Protection

• Loss of GND and loss of V

protection

• Very low standby current

• Reverse battery protection with external resistor

• Improved electromagnetic compatibility (EMC)

Product Summary

Overvoltage protection V

(

)

47 V

Operating voltage V

(

)

12...45 V

On-state resistance R

200 mΩ

Operating temperature T

-30...+85 °C

PG-TO252-5-1

Application

• All types of resistive, inductive and capacitive loads

• µC compatible power switch for 12 V and 24 V DC industrial applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input,

monolithically integrated in Smart SIPMOS



technology.

Providing embedded protective functions.

Summary of content (19 pages)

PAGE 1
ITS 4141D Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb(AZ) 47 V • Current limitation Operating voltage Vbb(on) 12...45 V • Overload protection On-state resistance RON • Overvoltage protection Operating temperature Ta 200 mΩ -30...
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ITS 4141D Block Diagram + Vbb Voltage Overvoltage Current Gate source protection limit protection TAB/3 V Logic Voltage Charge pump sensor Level shifter Limit for unclamped ind.
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ITS 4141D Maximum Ratings Symbol Parameter Value Unit at Tj = 25°C, unless otherwise specified Supply voltage Vbb -0,31)...48 Continuous input voltage2) VIN -10...Vbb Load current (Short - circuit current, see page 5) IL self limited Current through input pin (DC) I IN ±5 Reverse current through GND-pin 3) -I GND Junction temperature V A mA -0.5 A Tj internal limited °C Operating temperature Ta -30...+85 °C Storage temperature T stg -40 ...
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ITS 4141D Electrical Characteristics Symbol Parameter at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Values Unit min. typ. max. Thermal Characteristics Thermal resistance @ 6 cm 2 cooling area 1) Rth(JA) - - 60 K/W Thermal resistance, junction - case RthJC - - 3 K/W Load Switching Capabilities and Characteristics On-state resistance RON mΩ Tj = 25 °C, IL = 0.5 A - 150 200 Tj = 125 °C - 270 320 0.
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ITS 4141D Electrical Characteristics Symbol Parameter at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Values Unit min. typ. max. Operating Parameters Operating voltage Vbb(on) 12 - 45 Undervoltage shutdown Vbb(under) 7 - 10.5 Undervoltage restart Vbb(u rst) - - 11 Undervoltage hysteresis ∆Vbb(under) - 0.5 - V ∆Vbb(under) = Vbb(u rst) - Vbb(under) Standby current µA Ibb(off) Tj = -40...
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ITS 4141D Electrical Characteristics Parameter Symbol at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Values Unit min. typ. max. -102) - Vbb Input Continuous input voltage1) VIN Input turn-on threshold voltage VIN(T+) - - 3.0 Input turn-off threshold voltage VIN(T-) 1.82 - - Input threshold hysteresis ∆VIN(T) - 0.
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ITS 4141D EMC-Characteristics All EMC-Characteristics are based on limited number of sampels and no part of production test. Test Conditions: If not other specified the test circuitry is the minimal functional configuration without any external components for protection or filtering. Supply voltage: Vbb = 13.5V Load: RL = 220Ω Operation mode: PWM DC On/Off RGND DUT-Specific.: Temperature: Ta = 23 ±5°C ; Frequency: 100Hz / Duty Cycle: 50% Fast electrical transients Acc.
PAGE 8
ITS 4141D Conducted Emission Acc. IEC 61967-4 (1Ω / 150Ω method) Typ. Vbb-Pin Emission at DC-On with 150 Ω-matching network 100 1 5 0 o h m C la s s 6 1 5 0 o h m C la s s 1 V B B , n o is e f lo o r VBB, ON 90 80 70 60 dBµV 50 1 5 0 Ω / 8 -H 40 30 20 1 5 0 Ω / 1 3 -N 10 0 -1 0 -2 0 0 ,1 1 10 100 1000 f / MHz Typ.
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ITS 4141D Conducted Susceptibility Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Failure criteria: Forward Power CW Amplitude and frequency deviation max. 10% at Out Typ. Vbb-Pin Susceptibility at DC-On/Off 40 35 30 dBm 25 20 15 L im it D e v ic e : Load: O -M o d e : C o u p lin g P o in t : M o n it o r in g : M o d u la t io n : VBB, ON 10 VBB, OFF 5 BTS 4142 47 O hm s O N / O FF / PW M VBB O ut CW 0 1 10 100 1000 f / MHz Typ.
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ITS 4141D Terms Inductive and overvoltage output clamp + V bb Ibb V Z Vbb I IN IN V V IL PROFET VON ON OUT OUT GND IN V bb R GND GND I GND VOUT VON clamped to 47 V min. Input circuit (ESD protection) Overvoltage protection of logic part Vbb R IN + V bb I V I IN I Z2 L o g ic GND GND The use of ESD zener diodes as voltage clamp at DC conditions is not recommended R GND o p tio n a l S ig n a l G N D VZ2=V bb(AZ)=47V min., Reverse battery protection R I=3 kΩ typ.
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ITS 4141D GND disconnect Inductive Load switch-off energy dissipation E bb Vbb IN E AS OUT PROFET IN GND V bb V V GND IN ELoad Vbb PROFET OUT L = GND ZL { R EL ER L GND disconnect with GND pull up Energy stored in load inductance: EL = ½ * L * IL2 While demagnetizing load inductance, the enérgy dissipated in PROFET is E AS = E bb + EL - ER = VON(CL) * iL(t) dt, Vbb IN PROFET OUT GND V bb V IN with an approximate solution for RL > 0Ω: E AS = IL * R L IL * L ) * ( V b b + | V O U
PAGE 12
ITS 4141D Typ. transient thermal impedance Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Z thJA=f(tp) @ min. footprint Parameter: D=tp/T Parameter: D=tp/T 10 2 K/W 10 2 D=0.5 K/W D=0.5 D=0.2 10 1 D=0.2 10 1 D=0.05 10 0 D=0.02 D=0.1 D=0.05 Z thJA ZthJA D=0.1 D=0.02 10 0 D=0.01 D=0.01 10 -1 10 -1 D=0 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 s 10 D=0 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 4 tp Typ.
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ITS 4141D Typ. turn on time Typ. turn off time ton = f(Tj ); R L = 47Ω toff = f(Tj); RL = 47Ω 100 120 µs µs 15...30V 30V 60 toff ton 15V 80 60 40 40 20 0 -40 20 -20 0 20 40 60 80 100 °C Tj 0 -40 140 -20 0 20 40 60 Typ. slew rate on Typ. slew rate off dV/dton = f(Tj ) ; RL = 47 Ω dV/dtoff = f(Tj); RL = 47 Ω 2 80 100 °C Tj 140 4 V/µs V/µs -dV dtoff dV dton 1.6 1.4 3 2.5 1.2 30V 1 2 0.8 1.5 15V 30V 0.6 1 0.4 15V 0.5 0.
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ITS 4141D Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time IL(SCp) = f(Tj) ; Vbb = 20 V; tm = 150 µs toff(SC) = f(Tj,start) ; Vbb = 20V 2 1000 A ms 800 t off(SC) I L(SCp) 1.6 1.4 1.2 700 600 1 500 0.8 400 0.6 300 0.4 200 0.2 100 0 -40 -20 0 20 40 60 80 100 0 -40 140 °C Tj -20 0 20 40 60 80 100 °C Tj 140 Typ. initial peak short circuit current limit Typ.
PAGE 15
ITS 4141D Typ. input current Typ. input threshold voltage IIN = f(VIN); Vbb =15 V VIN(th) = f(T j) ; V bb = 15 V -40°C 60 3 on 25°C 40 V VIN(th) IIN µA 125°C 2 30 1.5 20 1 10 0.5 0 0 2.5 5 7.5 10 12.5 15 V VIN 0 -40 20 off -20 0 20 40 60 80 100 °C Tj Typ. input threshold voltage Typ. standby current VIN(th) = f(Vbb) ; Tj = 25°C I bb(off) = f(T j) ; V bb = 32V ; VIN ≤ 1,2 V 3 140 22 µA V 18 2 Ibb(off) V IN(th) on off 16 14 12 1.5 10 8 1 6 4 0.
PAGE 16
ITS 4141D Maximum allowable inductive switch-off Typ. leakage current energy, single pulse IL(off) = f(Tj) ; Vbb = 32V ; VIN ≤ 1,2 V EAS = f(IL ); Tjstart = 125°C 30 4 µA J IL(off) EAS 3 20 15 2.5 2 1.5 10 1 5 0.5 0 0 0.2 0.4 0.6 0.8 1 A IL 0 -40 1.4 -20 0 20 40 60 80 100 °C Tj 140 Typ.
PAGE 17
ITS 4141D Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching a lamp IN IN Vbb V OUT IL IL t t d(Vbbon) t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition Figure 2c: Switching an inductive load IN IN V OUT 90% VOUT t on dV/dton 10% dV/ dtoff t off IL IL t t Page 17 2006-03-22
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ITS 4141D Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling IN IN V OUT V OUT normal operation Output short to GND I L I L(SCp) I I Output short to GND L I L(SCr) L(SCr) t t Heating up of the chip may require several milliseconds, depending on external conditions.
PAGE 19
ITS 4141D Package and ordering code all dimensions in mm Sales code ITS 4141D Ordering code, SP000221235 2.3 +0.05 -0.10 A 1 ±0.1 0...0.15 0.5 +0.08 -0.04 5x0.6 ±0.1 1.14 4.56 0.9 +0.08 -0.04 0.51 min 0.15 max per side B 5.4 ±0.1 0.8 ±0.15 (4.17) 1 ±0.1 9.9 ±0.5 6.22 -0.2 6.5 +0.15 -0.10 0.1 0.25 M A B GPT09161 All metal surfaces tin plated, except area of cut. Published by Infineon Technologies AG, St.