Datasheet

Datasheet 13 Revision 2.3, 2013-05-16
ISOFACE™
ISO1H816G
Electrical Characteristics
4 Electrical Characteristics
Note: All voltages at pins 2to 14 are measured with respect to ground GNDCC (pin 15). All voltages at pin 20 to
pin 36 and TAB are measured with respect to ground GNDbb (pin 19). The voltage levels are valid if other
ratings are not violated. The two voltage domains V
CC
,GND
CC
and V
bb
,GND
bb
are internally galvanic
isolated.
4.1 Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of
the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 2
(VCC) and TAB (Vbb) is discharged before assembling the application circuit. Supply voltages higher than
V
bb(AZ)
require an external current limit for the GNDbb pin, e.g. with a 15Ω resistor in GNDbb connection.
Operating at absolute maximum ratings can lead to a reduced lifetime.
Parameter
at T
j
= -40 ... 135°C, unless otherwise specified
Symbol Limit Values Unit
min. max.
Supply voltage input interface (VCC) V
CC
-0.5 6.5 V
Supply voltage output interface (Vbb) V
bb
-1
1)
1) defined by P
tot
45
Continuos voltage at pin SI V
Dx
-0.5 6.5
Continuos voltage at pin CS
V
CS
-0.5 6.5
Continuos voltage at pin SCLK V
WR
-0.5 6.5
Continuos voltage at pin DIS
V
DIS
-0.5 6.5
Continuos voltage at pin SO V
Dx
-0.5 6.5
Continuos voltage at pin DIAG
V
DIAG
-0.5 6.5
Load current (short-circuit current) I
L
---
self limited A
Reverse current through GNDbb
1)
I
GNDbb
-1.6
---
Operating Temperature T
j
-25 internal limited °C
Extended Operation Temperature T
j
-40 internal limited
Storage Temperature T
stg
-50 150
Power Dissipation
2)
2) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air.
P
tot
---
3.3 W
Inductive load switch-off energy dissipation
3)
single
pulse, T
j
= 125°C, I
L
= 1.2A
one channel active
all channel simultaneously active (each channel)
3) not subject to production test, specified by design
E
AS
---
10
1
J
Load dump protection
3)
V
loadDump
4)
=V
A
+ V
S
V
IN
= low or high
t
d
= 400ms, R
I
= 2W, R
L
= 27W, V
A
= 13.5V
t
d
= 350ms, R
I
= 2W, R
L
= 57W, V
A
= 27V
V
Loaddump
---
---
90
117
V
Electrostatic discharge voltage (Human Body Model)
according to JESD22-A114-B
V
ESD
2
kV
Electrostatic discharge voltage (Charge Device Model)
according to ESD STM5.3.1 - 1999
V
ESD
1
kV
Continuos reverse drain current
1)3)
, each channel I
S
---
4A