Datasheet

Datasheet 12 Version 2.3, 2009-09-16
ISOFACE™
ISO1H801G
Electrical Characteristics
4.2 Thermal Characteristics
Parameter
at T
j
= -25 ... 125°C, V
bb
=15...30V, V
CC
=4.5...5.5V, unless
otherwise specified
Symbol Limit Values Unit Test Condition
min. typ. max.
Thermal resistance junction - case R
thJC
  1.5 K/W
Thermal resistance @ min. footprint R
th(JA)
  50
Thermal resistance @ 6cm² cooling area
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air.
1)
R
th(JA)
  38
4.3 Load Switching Capabilities and Characteristics
Parameter
at T
j
= -25 ... 125°C, V
bb
=15...30V, V
CC
=4.5...5.5V, unless
otherwise specified
Symbol Limit Values Unit Test Condition
min. typ. max.
On-state resistance, I
L
= 0.5A
T
j
= 25°C
T
j
= 125°C
R
ON


150
270
200
320
mΩ
Turn-on time to 90% V
1) The turn-on and turn-off time includes the switching time of the high-side switch and the transmission time via the coreless
transformer in normal operating mode. During a failure on the coreless transformer transmission turn-on or turn-off time
can increase by up to 50µs.
OUT
1)
R
L
= 47Ω, V
Dx
= 0 to 5V
t
on
 64 120 µs
Turn-off time to 10% V
OUT
1)
R
L
= 47Ω, V
Dx
= 5 to 0V
t
off
 89 170
Slew rate on 10 to 30% V
OUT
R
L
= 47Ω, V
bb
= 15V
dV/dt
on
 1 2 V/µs
Slew rate off 70 to 40% V
OUT
R
L
= 47Ω, V
bb
= 15V
-dV/dt
off
 1 2
4.4 Operating Parameters
Parameter
at T
j
= -25 ... 125°C, V
bb
=15...30V, V
CC
=4.5...5.5V, unless
otherwise specified
Symbol Limit Values Unit Test Condition
min. typ. max.
Common mode transient immunity
1)
∆V
ISO
/dt -25 - 25 kV/µs ∆V
ISO
= 200V
Magnetic field immunity
1)
H
IM
100 A/m IEC61000-4-8
Voltage domain V
bb
(Output interface)
Undervoltage shutdown V
bb(under)
7

10.5 V
Undervoltage restart V
bb(u_rst)
 
11
Undervoltage hysteresis ∆V
bb(under)

0.5

Undervoltage current I
bb(uvlo)

1 2.5 mA V
bb
< 7V
Operating current I
GNDL

10 14 mA All Channels
ON - no load
Leakage output current
(included in I
bb(off)
)
V
Dx
= low, each channel
I
L(off)

5 30 µA