Datasheet

IRLR/U8743PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
–––20–––mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance
––– 2.4 3.1
––– 3.0 3.9
V
GS(th)
Gate Threshold Voltage
1.35 1.9 2.35 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient
––– -6.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage
––– ––– 100
Gate-to-Source Reverse Leakage
––– ––– -100
gfs
Forward Transconductance
89 ––– ––– S
Q
g
Total Gate Charge
––– 39 59
Q
gs1
Pre-Vth Gate-to-Source Charge
–––10–––
Q
gs2
Post-Vth Gate-to-Source Charge
––– 3.9 ––– nC
Q
gd
Gate-to-Drain Charge
–––13–––
Q
godr
Gate Charge Overdrive
––– 12 ––– See Fig. 16
Q
sw Switch Charge (Q
gs2
+ Q
gd
)
–––17–––
Q
oss
Output Charge
––– 21 ––– nC
R
G
Gate Resistance ––– 0.85 1.5
Ω
t
d(on)
Turn-On Delay Time
–––19–––
t
r
Rise Time
–––35–––
t
d(off)
Turn-Off Delay Time
–––21–––
t
f
Fall Time
–––17–––
C
iss
Input Capacitance
––– 4880 –––
C
oss
Output Capacitance
––– 950 –––
C
rss
Reverse Transfer Capacitance
––– 470 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
––– –––
(Body Diode)
I
SM
Pulsed Source Current
––– –––
(Body Diode)
V
SD
Diode Forward Voltage
––– ––– 1.0 V
t
rr
Reverse Recovery Time
–––1827ns
Q
rr
Reverse Recovery Charge
––– 32 48 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 20A
V
GS
= 0V
V
DS
= 15V
R
G
= 1.8
Ω
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/
µ
s
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= 15V, I
D
= 20A
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
V
DS
= 15V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 20V
V
GS
= -20V
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Conditions
13.5
See Fig. 14
Max.
250
20
ƒ = 1.0MHz
m
Ω
160
640
µA
nA
ns
pF
A