Datasheet

IRLR/U8256PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage
25 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
––– 18 ––– mV/°C
––– 4.2 5.7
––– 6.7 8.5
V
GS(th)
Gate Threshold Voltage
1.35 1.8 2.35 V
Δ
V
GS(th)
/
Δ
T
J
Gate Threshold Voltage Coefficient
––– -7.2 ––– mV/°C
––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage
––– ––– 100
Gate-to-Source Reverse Leakage
––– ––– -100
gfs
Forward Transconductance
81 ––– ––– S
Q
g
Total Gate Charge
––– 10 15
Q
gs1
Pre-Vth Gate-to-Source Charge
––– 2.3 –––
Q
gs2
Post-Vth Gate-to-Source Charge
––– 1.6 ––– nC
Q
gd
Gate-to-Drain Charge
––– 3.6 –––
Q
godr
Gate Charge Overdrive
––– 2.6 ––– See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 5.1 –––
Q
oss
Output Charge
––– 9.0 ––– nC
R
G
Gate Resistance ––– 2.5
3.9
Ω
t
d(on)
Turn-On Delay Time
––– 9.7 –––
t
r
Rise Time
––– 46 –––
t
d(off)
Turn-Off Delay Time
––– 12 –––
t
f
Fall Time
––– 8.5 –––
C
iss
Input Capacitance
––– 1470 –––
C
oss
Output Capacitance
––– 453 –––
C
rss
Reverse Transfer Capacitance
––– 185 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
––– ––– 1.0 V
t
rr
Reverse Recovery Time
––– 19 29 ns
Q
rr
Reverse Recovery Charge
––– 17 26 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 20A
V
GS
= 0V
V
DS
= 13V
T
J
= 25°C, I
F
= 20A, V
DD
= 13V
di/dt = 250A/μs
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
V
DS
= V
GS
, I
D
= 25μA
R
G
= 1.8
Ω
V
DS
= 13V
I
D
= 20A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 20A
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
Conditions
6.3
See Fig. 14
Max.
86
20
ƒ = 1.0MHz
mΩ
81
325
μA
nA
ns
pF
A
––– –––
––– –––
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current