Datasheet

IRLR/U3717PbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 12 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.4 4.0
m
Ω
––– 4.6 5.5
V
GS(th)
Gate Threshold Voltage 1.55 2.0 2.45 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 49 ––– ––– S
Q
g
Total Gate Charge ––– 21 31
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 6.4 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC
Q
gd
Gate-to-Drain Charge ––– 7.2 –––
Q
godr
Gate Charge Overdrive ––– 5.5 ––– See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 9.1 –––
Q
oss
Output Charge ––– 13 ––– nC
t
d(on)
Turn-On Delay Time ––– 14 –––
t
r
Rise Time –––14–––ns
t
d(off)
Turn-Off Delay Time ––– 5.8 –––
t
f
Fall Time –––16–––
C
iss
Input Capacitance ––– 2830 –––
C
oss
Output Capacitance ––– 920 ––– pF
C
rss
Reverse Transfer Capacitance ––– 420 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
120
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 460
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 22 33 ns
Q
rr
Reverse Recovery Charge ––– 13 19 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 20V
V
GS
= -20V
Conditions
8.9
Max.
460
12
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Clamped Inductive Load
V
DS
= 10V, I
D
= 12A
V
DS
= 10V, V
GS
= 0V
V
DD
= 10V, V
GS
= 4.5V
I
D
= 12A
V
DS
= 10V
T
J
= 25°C, I
F
= 12A, V
DD
= 10V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
GS
= 4.5V, I
D
= 12A
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 12A
V
GS
= 0V
V
DS
= 10V