Datasheet

IRLMS6702
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 –– –– V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– -0.005 –– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.200 V
GS
= -4.5V, I
D
= -1.6A
––– ––– 0.375 V
GS
= -2.7V, I
D
= -0.80A
V
GS(th)
Gate Threshold Voltage -0.70 ––– ––– V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 1.5 ––– ––– S V
DS
= -10V, I
D
= -0.80A
–– –– -1.0 V
DS
= -16V, V
GS
= 0V
––– ––– -25 V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -12V
Gate-to-Source Reverse Leakage ––– –– 100 V
GS
= 12V
Q
g
Total Gate Charge –– 5.8 8.8 I
D
= -1.6A
Q
gs
Gate-to-Source Charge ––– 1.8 2.6 nC V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.1 3.1 V
GS
= -4.5V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time ––– 13 –– V
DD
= -10V
t
r
Rise Time –– 20 –– I
D
= -1.6A
t
d(off)
Turn-Off Delay Time ––– 21 –– R
G
= 6.0
t
f
Fall Time –– 18 –– R
D
= 6.1Ω, See Fig. 10
C
iss
Input Capacitance ––– 210 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 130 ––– pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance ––– 73 –– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– –– -1.2 V T
J
= 25°C, I
S
= -1.6A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 25 37 ns T
J
= 25°C, I
F
= -1.6A
Q
rr
Reverse RecoveryCharge –– 15 22 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-13
–––
–––
–––
-1.7–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-1.6A, di/dt -100A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Notes:
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board, t 5sec.