Datasheet
IRLMS1902
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.10 V
GS
= 4.5V, I
D
= 2.2A
––– ––– 0.17 V
GS
= 2.7V, I
D
= 1.1A
V
GS(th)
Gate Threshold Voltage 0.70 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 3.2 ––– ––– S V
DS
= 10V, I
D
= 1.1A
––– ––– 1.0 V
DS
= 16V, V
GS
= 0V
––– ––– 25 V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -12V
Q
g
Total Gate Charge ––– 4.7 7.0 I
D
= 2.2A
Q
gs
Gate-to-Source Charge ––– 0.97 1.5 nC V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.8 2.6 V
GS
= 4.5V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time ––– 7.0 ––– V
DD
= 10V
t
r
Rise Time ––– 11 ––– I
D
= 2.2A
t
d(off)
Turn-Off Delay Time ––– 12 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 4.0 ––– R
D
= 4.4Ω, See Fig. 10
C
iss
Input Capacitance ––– 300 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 120 ––– pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 40 60 ns T
J
= 25°C, I
F
= 2.2A
Q
rr
Reverse RecoveryCharge ––– 37 55 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
18
–––
–––
–––
1.7–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 2.2A, di/dt ≤ 110A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.