Datasheet
IRLML6402
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 29 43 ns T
J
= 25°C, I
F
= -1.0A
Q
rr
Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/µs
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
-1.3
-22
A
S
D
G
** For recommended footprint and soldering techniques refer to application note #AN-994.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting T
J
= 25°C, L = 1.65mH
R
G
= 25Ω, I
AS
= -3.7A.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.050 0.065 V
GS
= -4.5V, I
D
= -3.7A
––– 0.080 0.135 V
GS
= -2.5V, I
D
= -3.1A
V
GS(th)
Gate Threshold Voltage -0.40 -0.55 -0.95 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 6.0 ––– ––– S V
DS
= -10V, I
D
= -3.7A
––– ––– -1.0 V
DS
= -20V, V
GS
= 0V
––– ––– -25 V
DS
= -20V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -12V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 12V
Q
g
Total Gate Charge ––– 8.0 12 I
D
= -3.7A
Q
gs
Gate-to-Source Charge ––– 1.2 1.8 nC V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 V
GS
= -5.0V
t
d(on)
Turn-On Delay Time ––– 350 ––– V
DD
= -10V
t
r
Rise Time ––– 48 ––– I
D
= -3.7A
t
d(off)
Turn-Off Delay Time ––– 588 ––– R
G
= 89Ω
t
f
Fall Time ––– 381 ––– R
D
= 2.7Ω
C
iss
Input Capacitance ––– 633 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 145 ––– pF V
DS
= -10V
C
rss
Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns