Datasheet

IRLML6401
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 22 33 ns T
J
= 25°C, I
F
= -1.3A
Q
rr
Reverse RecoveryCharge ––– 8.0 12 nC di/dt = -100A/µs
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width 300µs; duty cycle 2%.
Source-Drain Ratings and Characteristics
-1.3
-34
A
S
D
G
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting T
J
= 25°C, L = 3.5mH
R
G
= 25, I
AS
= -4.3A.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -12 ––– –– V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.050 V
GS
= -4.5V, I
D
= -4.3A
R
DS(on)
Static Drain-to-Source On-Resistance  ––– 0.085 V
GS
= -2.5V, I
D
= -2.5A
 ––– 0.125 V
GS
= -1.8V, I
D
= -2.0A
V
GS(th)
Gate Threshold Voltage -0.40 -0.55 -0.95 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 8.6 ––– ––– S V
DS
= -10V, I
D
= -4.3A
––– –– -1.0 V
DS
= -12V, V
GS
= 0V
––– ––– -25 V
DS
= -9.6V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -8.0V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 8.0V
Q
g
Total Gate Charge –– 10 15 I
D
= -4.3A
Q
gs
Gate-to-Source Charge ––– 1.4 2.1 nC V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge –– 2.6 3.9 V
GS
= -5.0V
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= -6.0V
t
r
Rise Time ––– 32 ––– I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 250 ––– R
D
= 6.0
t
f
Fall Time ––– 210 ––– R
G
= 89
C
iss
Input Capacitance ––– 830 –– V
GS
= 0V
C
oss
Output Capacitance ––– 180 ––– pF V
DS
= -10V
C
rss
Reverse Transfer Capacitance ––– 125 –– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
I
DSS
Drain-to-Source Leakage Current
nA
ns