Datasheet

IRLML6246TRPbF
2 www.irf.com
D
S
G
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C
––– 30 46
––– 45 66
V
GS(th)
Gate Threshold Voltage 0.5 0.8 1.1 V
I
DSS
––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 4.0 –––
Ω
gfs Forward Transconductance 10 ––– ––– S
Q
g
Total Gate Charge ––– 3.5 –––
Q
gs
Gate-to-Source Charge ––– 0.26 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.7 –––
t
d(on)
Turn-On Delay Time ––– 3.6 –––
t
r
Rise Time ––– 4.9 –––
t
d(off)
Turn-Off Delay Time ––– 11 –––
t
f
Fall Time ––– 6.0 –––
C
iss
Input Capacitance ––– 290 –––
C
oss
Output Capacitance ––– 64 –––
C
rss
Reverse Transfer Capacitance ––– 41 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 8.6 13 ns
Q
rr
Reverse Recovery Charge ––– 2.8 4.2 nC
––– –––
––– –––
pF
A
1.3
16
V
DD
=10V
nA
nC
ns
V
DS
= V
GS
, I
D
= 5μA
V
DS
=16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
R
DS(on)
V
GS
= 2.5V, I
D
= 3.3A
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
mΩ
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 4.1A
MOSFET symbol
showing the
V
DS
=10V
Conditions
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 16V
ƒ = 1.0MHz
R
G
= 6.8
Ω
V
GS
= 4.5V
di/dt = 100A/μs
V
GS
= 12V
V
GS
= -12V
T
J
= 25°C, I
S
= 4.1A, V
GS
= 0V
integral reverse
p-n junction diode.
V
DS
= 10V, I
D
= 4.1A
I
D
= 4.1A
I
D
= 1.0A
T
J
= 25°C, V
R
= 15V, I
F
=1.3A