Datasheet
IRLML2803
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.029 V/°C Reference to 25°C, I
D
= 1mA
0.25 V
GS
= 10V, I
D
= 0.91A
0.40 V
GS
= 4.5V, I
D
= 0.46A
V
GS(th)
Gate Threshold Voltage 1.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 0.87 S V
DS
= 10V, I
D
= 0.46A
1.0 V
DS
= 24V, V
GS
= 0V
25 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage -100 V
GS
= -20V
Gate-to-Source Reverse Leakage 100 V
GS
= 20V
Q
g
Total Gate Charge 3.3 5.0 I
D
= 0.91A
Q
gs
Gate-to-Source Charge 0.48 0.72 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge 1.1 1.7 V
GS
= 10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time 3.9 V
DD
= 15V
t
r
Rise Time 4.0 I
D
= 0.91A
t
d(off)
Turn-Off Delay Time 9.0 R
G
= 6.2Ω
t
f
Fall Time 1.7 R
D
= 16Ω, See Fig. 10
C
iss
Input Capacitance 85 V
GS
= 0V
C
oss
Output Capacitance 34 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 15 = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage 1.2 V T
J
= 25°C, I
S
= 0.91A, V
GS
= 0V
t
rr
Reverse Recovery Time 26 40 ns T
J
= 25°C, I
F
= 0.91A
Q
rr
Reverse RecoveryCharge 22 32 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
7.3
0.54
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 0.91A, di/dt ≤ 120A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.