Datasheet
IRLML2402
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.024 V/°C Reference to 25°C, I
D
= 1mA
0.25 V
GS
= 4.5V, I
D
= 0.93A
0.35 V
GS
= 2.7V, I
D
= 0.47A
V
GS(th)
Gate Threshold Voltage 0.70 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 1.3 S V
DS
= 10V, I
D
= 0.47A
1.0 V
DS
= 16V, V
GS
= 0V
25 V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage -100 V
GS
= -12V
Gate-to-Source Reverse Leakage 100 V
GS
= 12V
Q
g
Total Gate Charge 2.6 3.9 I
D
= 0.93A
Q
gs
Gate-to-Source Charge 0.41 0.62 nC V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge 1.1 1.7 V
GS
= 4.5V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time 2.5 V
DD
= 10V
t
r
Rise Time 9.5 I
D
= 0.93A
t
d(off)
Turn-Off Delay Time 9.7 R
G
= 6.2Ω
t
f
Fall Time 4.8 R
D
= 11Ω, See Fig. 10
C
iss
Input Capacitance 110 V
GS
= 0V
C
oss
Output Capacitance 51 pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance 25 = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage 1.2 V T
J
= 25°C, I
S
= 0.93A, V
GS
= 0V
t
rr
Reverse Recovery Time 25 38 ns T
J
= 25°C, I
F
= 0.93A
Q
rr
Reverse RecoveryCharge 16 24 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
7.4
0.54
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 0.93A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.