Datasheet

IRLML2060TRPbF
2 www.irf.com
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V

V
(BR)DSS
/

T
J
Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C
––– 356 480
––– 475 640
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.5 V
I
DSS
––– ––– 20
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 7.5 –––

gfs Forward Transconductance 1.6 ––– ––– S
Q
g
Total Gate Charge ––– 0.67 –––
Q
gs
Gate-to-Source Charge ––– 0.18 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 0.40 –––
t
d(on)
Turn-On Delay Time ––– 4.9 –––
t
r
Rise Time ––– 3.8 –––
t
d(off)
Turn-Off Delay Time ––– 3.7 –––
t
f
Fall Time ––– 2.8 –––
C
iss
Input Capacitance ––– 64 –––
C
oss
Output Capacitance ––– 13 –––
C
rss
Reverse Transfer Capacitance ––– 6.6 –––
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 14 21 ns
Q
rr
Reverse Recovery Charge ––– 8.3 12 nC
di/dt = 100A/μs
V
GS
= 16V
V
GS
= -16V
T
J
= 25°C, I
S
= 1.2A, V
GS
= 0V
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 1.2A
I
D
= 1.2A
I
D
= 1.2A
T
J
= 25°C, V
R
= 30V, I
F
=1.3A
MOSFET symbol
showing the
V
DS
= 30V
Conditions
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
R
G
= 6.8
V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5.0mA
V
GS
= 10V, I
D
= 1.2A
V
DS
= V
GS
, I
D
= 25μA
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
R
DS(on)
V
GS
= 4.5V, I
D
= 0.96A
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
m

V
DD
= 30V
nA
nC
ns
pF
A
1.2
4.8
––– –––
––– –––