Datasheet

IRLML2030TRPbF
2 www.irf.com
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C
––– 123 154
–––80100
V
GS(th)
Gate Threshold Voltage 1.3 1.7 2.3 V
I
DSS
––– ––– 1
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 7.6 ––– Ω
gfs Forward Transconductance 2.6 ––– ––– S
Q
g
Total Gate Charge ––– 1.0 –––
Q
gs
Gate-to-Source Charge ––– 0.34 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 0.34 –––
t
d(on)
Turn-On Delay Time ––– 4.1 –––
t
r
Rise Time ––– 3.3 –––
t
d(off)
Turn-Off Delay Time ––– 4.5 –––
t
f
Fall Time ––– 2.9 –––
C
iss
Input Capacitance ––– 110 –––
C
oss
Output Capacitance ––– 29 –––
C
rss
Reverse Transfer Capacitance ––– 12 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 9.0 14 ns
Q
rr
Reverse Recovery Charge ––– 0.3 0.4 nC di/dt = 100A/μs
V
GS
= 20V
V
GS
= -20V
T
J
= 25°C, I
S
= 2.7A, V
GS
= 0V
integral reverse
p-n junction diode.
V
DS
= 10V, I
D
= 2.7A
I
D
= 2.7A
I
D
= 1.0A
T
J
= 25°C, V
R
= 15V, I
F
=2.7A
MOSFET symbol
showing the
V
DS
=15V
Conditions
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
R
G
= 6.8Ω
V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 2.2A
V
DS
= V
GS
, I
D
= 25μA
V
DS
=24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
R
DS(on)
V
GS
= 10V, I
D
= 2.7A
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
m
Ω
V
DD
=15V
nA
nC
ns
pF
A
1.6
11
––– –––
––– –––