Datasheet

IRLML0040TRPbF
2 www.irf.com
D
S
G
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C
––– 44 56
––– 62 78
V
GS(th)
Gate Threshold Voltage 1.0 1.8 2.5 V
I
DSS
––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 1.1 ––– Ω
gfs Forward Transconductance 6.2 ––– ––– S
Q
g
Total Gate Charge ––– 2.6 3.9
Q
gs
Gate-to-Source Charge ––– 0.7 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.4 –––
t
d(on)
Turn-On Delay Time ––– 5.1 –––
t
r
Rise Time ––– 5.4 –––
t
d(off)
Turn-Off Delay Time ––– 6.4 –––
t
f
Fall Time ––– 4.3 –––
C
iss
Input Capacitance ––– 266 –––
C
oss
Output Capacitance ––– 49 –––
C
rss
Reverse Transfer Capacitance ––– 29 –––
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 10 ––– ns
Q
rr
Reverse Recovery Charge ––– 9.3 ––– nC
Static Drain-to-Source On-Resistance
m
Ω
R
DS(on)
V
GS
= 4.5V, I
D
= 2.9A
di/dt = 100A/μs
V
GS
= 16V
V
GS
= -16V
T
J
= 25°C, V
R
= 32V, I
F
= 1.3 A
MOSFET symbol
showing the
V
DS
= 20V
Conditions
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.6A
V
DS
= V
GS
, I
D
= 25μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
Drain-to-Source Leakage Current μA
V
DS
= 10V, I
D
= 3.6A
I
D
= 3.6A
nA
nC
I
D
= 1.0A
R
G
= 6.8 Ω
V
GS
= 4.5V
V
DD
= 20V
ns
pF
A
1.3
15
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