Datasheet

IRLIZ34N
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.035 V
GS
= 10V, I
D
= 12A 
––– ––– 0.046 Ω V
GS
= 5.0V, I
D
= 12A 
––– ––– 0.060 V
GS
= 4.0V, I
D
= 10A 
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 11 ––– ––– S V
DS
= 25V, I
D
= 16A
––– ––– 25 V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 25 I
D
= 16A
Q
gs
Gate-to-Source Charge ––– ––– 5.2 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 14 V
GS
= 5.0V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time ––– 8.9 ––– V
DD
= 28V
t
r
Rise Time ––– 100 ––– I
D
= 16A
t
d(off)
Turn-Off Delay Time ––– 29 ––– R
G
= 6.5Ω, V
GS
= 5.0V
t
f
Fall Time ––– 21 ––– R
D
= 1.8Ω, See Fig. 10 
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 880 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 220 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 94 ––– ƒ = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance ––– 7.5 –––
L
D
Internal Drain Inductance ––– 4.5 –––
µA
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
Notes:
 Uses IRLZ34N data and test conditions
 V
DD
= 25V, starting T
J
= 25°C, L = 610µH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
 t=60s, ƒ=60Hz
 I
SD
≤ 16A, di/dt ≤ 270A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 12A, V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 76 110 ns T
J
= 25°C, I
F
= 16A
Q
rr
Reverse RecoveryCharge ––– 190 290 nC di/dt = 100A/µs 
Source-Drain Ratings and Characteristics
A
––– ––– 110
––– ––– 22
S
D
G