Datasheet

IRLHS6376PbF
2 www.irf.com
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Current limited by package.
 Pulse width ≤ 400μs; duty cycle ≤ 2%.
 When mounted on 1 inch square copper board.
 R
θ
is measured at T
J
of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
––– 19
R
θ
JC
(Top)
Junction-to-Case
––– 175
°C/W
R
θ
JA
Junction-to-Ambient
––– 86
R
θ
JA
(<10s)
Junction-to-Ambient
–––
69
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 48 63
––– 61 82
V
GS(th)
Gate Threshold Voltage 0.5 0.8 1.1 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -3.6 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 8.8 ––– ––– S
Q
g
Total Gate Charge
––– 2.8 –––
V
DS
= 15V
Q
gs
Gate-to-Source Charge
–––0.13–––
Q
gd
Gate-to-Drain Charge
––– 1.1 –––
R
G
Gate Resistance ––– 4.6
–––
Ω
t
d(on)
Turn-On Delay Time ––– 4.4 –––
t
r
Rise Time –––11–––
t
d(off)
Turn-Off Delay Time ––– 11 –––
t
f
Fall Time ––– 9.4 –––
C
iss
Input Capacitance ––– 270 –––
C
oss
Output Capacitance ––– 32 –––
C
rss
Reverse Transfer Capacitance ––– 20 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 8.0 12 ns
Q
rr
Reverse Recovery Charge ––– 5.9 8.9 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
GS
= 4.5V
V
GS
= 12V
V
GS
= -12V
––– ––– 30
––– ––– 7.6
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 3.4A
Conditions
See Fig.15
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 3.4A , V
DD
= 15V
di/dt = 260A/μs
T
J
= 25°C, I
S
= 3.4A , V
GS
= 0V
showing the
integral reverse
p-n junction diode.
R
G
=1.8
Ω
V
DS
= 10V, I
D
= 3.4A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 3.4A (See Fig.17 & 18)
ID = 3.4A
V
GS
= 0V
V
DS
= 25V
V
DS
= 24V, V
GS
= 0V
V
DS
= V
GS
, I
D
= 10μA
V
GS
= 2.5V, I
D
= 3.4A
m
Ω
V
DD
= 10V, V
GS
= 4.5V