Datasheet

2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
IRLHS6242PbF
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Package is limited to 12A by die-source to lead-frame bonding technology.
 Pulse width ≤ 400μs; duty cycle ≤ 2%.
 When mounted on 1 ich square copper board.
 R
θ
is measured at T
J
of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
 Calculated continuous current based on maximum allowable junction temperature.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 6.8 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 9.4 11.7
––– 12.4 15.5
V
GS(th)
Gate Threshold Voltage 0.5 0.8 1.1 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 36 ––– ––– S
Q
g
Total Gate Charge
––– 14 –––
V
DS
= 10V
Q
gs
Gate-to-Source Charge
––– 1.5 –––
Q
gd
Gate-to-Drain Charge
––– 6.3 –––
R
G
Gate Resistance ––– 2.1
–––
Ω
t
d(on)
Turn-On Delay Time ––– 5.8 –––
t
r
Rise Time ––– 15 –––
t
d(off)
Turn-Off Delay Time ––– 19 –––
t
f
Fall Time ––– 13 –––
C
iss
Input Capacitance ––– 1110 –––
C
oss
Output Capacitance ––– 260 –––
C
rss
Reverse Transfer Capacitance ––– 180 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 15 23 ns
Q
rr
Reverse Recovery Charge ––– 12 18 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
GS
= 4.5V
V
GS
= 12V
V
GS
= -12V
––– ––– 88
––– ––– 22
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 8.5A
Conditions
See Fig.15
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 8.5A , V
DD
= 10V
di/dt = 210A/μs
T
J
= 25°C, I
S
= 8.5A , V
GS
= 0V
showing the
integral reverse
p-n junction diode.
R
G
=1.8
Ω
V
DS
= 10V, I
D
= 8.5A
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 8.5A (See Fig.17 & 18)
ID = 8.5A
V
GS
= 0V
V
DS
= 10V
V
DS
= 16V, V
GS
= 0V
V
DS
= V
GS
, I
D
= 10μA
V
GS
= 2.5V, I
D
= 8.5A
mΩ
V
DD
= 10V, V
GS
= 4.5V
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
–––
13
R
θ
JC
(Top)
Junction-to-Case
––– 94
°C/W
R
θ
JA
Junction-to-Ambient
––– 63
R
θ
JA
(<10s)
Junction-to-Ambient
–––
46