Datasheet

IRLHS2242TR/TR2PbF
2 www.irf.com
G
D
S
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
–––
13
R
θJC
(Top)
Junction-to-Case
–––
90
°C/W
R
θ
JA
Junction-to-Ambient
–––
60
R
θJA
(<10s)
Junction-to-Ambient
–––
42
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage -20 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 25 31
––– 43 53
V
GS(th)
Gate Threshold Voltage -0.4 -0.8 -1.1 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -3.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 10 ––– ––– S
Q
g
Total Gate Charge ––– 12 ––– nC
Q
g
Total Gate Charge
––– 9.6 –––
V
DS
= -10V
Q
gs
Gate-to-Source Charge
––– 1.6 –––
Q
gd
Gate-to-Drain Charge
––– 3.7 –––
Q
godr
Gate Charge Overdrive ––– 4.3 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 4.8 –––
Q
oss
Output Charge ––– 6.8 ––– nC
R
G
Gate Resistance ––– 17
–––
Ω
t
d(on)
Turn-On Delay Time ––– 7.9 –––
t
r
Rise Time ––– 54 –––
t
d(off)
Turn-Off Delay Time ––– 54 –––
t
f
Fall Time ––– 66 –––
C
iss
Input Capacitance ––– 877 –––
C
oss
Output Capacitance ––– 273 –––
C
rss
Reverse Transfer Capacitance ––– 182 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 27 41 ns
Q
rr
Reverse Recovery Charge ––– 20 30 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= -10μA
V
GS
= -2.5V, I
D
= -6.8A
Typ.
mΩ
V
DD
= -10V, V
GS
= -4.5V
V
GS
=-10V, V
DS
= -10V, I
D
= -8.5A
V
DS
= 16V, V
GS
= 0V
–––
R
G
= 2.0
Ω
V
DS
= -10V, I
D
= -8.5A
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= -8.5A
ID = -8.5A
V
GS
= 0V
V
DS
= -10V
V
DS
= -16V, V
GS
= 0V
T
J
= 25°C, I
F
= -8.5A, V
DD
= -10V
di/dt = 200A/μs
T
J
= 25°C, I
S
= -8.5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
Max.
18
-8.5
ƒ = 1.0KHz
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -8.5A
––– ––– -34
––– ––– -8.5
MOSFET symbol
nA
ns
A
pF
nC
V
GS
= -4.5V
–––
V
GS
= -12V
V
GS
= 12V