Datasheet

IRLHM620PbF
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
––– 3.4
R
θ
JC
(Top)
Junction-to-Case
–––
37
°C/W
R
θ
JA
Junction-to-Ambient
––– 46
R
θ
JA
(<10s)
Junction-to-Ambient
–––
31
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 5.4 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.5 2.2
––– 1.8 2.5
––– 2.7 3.5
V
GS(th)
Gate Threshold Voltage 0.5 0.8 1.1 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -4.3 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 58 ––– ––– S
Q
g
Total Gate Charge ––– 52 78 V
DS
= 10V
Q
gs
Gate-to-Source Charge ––– 6.3 –––
Q
gd
Gate-to-Drain Charge ––– 25 –––
R
G
Gate Resistance ––– 2.6
–––
Ω
t
d(on)
Turn-On Delay Time ––– 7.5 –––
t
r
Rise Time ––– 25 –––
t
d(off)
Turn-Off Delay Time ––– 57 –––
t
f
Fall Time ––– 37 –––
C
is s
Input Capacitance ––– 3620 –––
C
oss
Output Capacitance ––– 900 –––
C
rss
Reverse Transfer Capacitance ––– 620 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 41 62 ns
Q
rr
Reverse Recovery Charge ––– 68 100 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
GS
= 4.5V
–––
V
GS
= 12V
V
GS
= -12V
––– ––– 160
––– ––– 40
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
Conditions
See Fig.15
Max.
120
20
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 20A, V
DD
= 10V
di/dt = 220A/μs
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
–––
R
G
=1.0
Ω
V
DS
= 10V, I
D
= 20A
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 20A (See Fig.17 & 18)
I
D
= 20A
V
GS
= 0V
V
DS
= 10V
V
DS
= 16V, V
GS
= 0V
V
DS
= V
GS
, I
D
= 50μA
V
GS
= 2.5V, I
D
= 20A
Typ.
mΩ
V
DD
= 10V, V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 20A