Datasheet

IRLH5034PbF
2 www.irf.com
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
––– 0.5
R
θJC
(Top)
Junction-to-Case
––– 15
°C/W
R
θ
JA
Junction-to-Ambient
––– 35
R
θJA
(<10s)
Junction-to-Ambient
––– 22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.0 2.4
––– 2.7 3.2
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.5 V
∆
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 130 ––– ––– S
Q
g
Total Gate Charge ––– 82 ––– nC
Q
g
Total Gate Charge ––– 43 65
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 8.1 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 5.0 –––
Q
gd
Gate-to-Drain Charge ––– 24 –––
Q
godr
Gate Charge Overdrive ––– 5.9 ––– See Fig.17 & 18
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
––– 29 –––
Q
oss
Output Charge ––– 31 ––– nC
R
G
Gate Resistance ––– 1.2
–––
Ω
t
d(on)
Turn-On Delay Time ––– 21 –––
t
r
Rise Time ––– 54 –––
t
d(off)
Turn-Off Delay Time ––– 31 –––
t
f
Fall Time ––– 21 –––
C
iss
Input Capacitance ––– 4730 –––
C
oss
Output Capacitance ––– 860 –––
C
rss
Reverse Transfer Capacitance ––– 460 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 25 38 ns
Q
rr
Reverse Recovery Charge ––– 74 110 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 150µA
A
100
––– ––– 400
––– –––
nA
ns
pF
nC
Conditions
See Fig.15
Max.
360
50
ƒ = 1.0MHz
V
DS
= 20V
–––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 4.5V
I
D
= 50A
V
GS
= 0V
V
DS
= 25V
V
GS
= 16V
V
GS
= -16V
V
DS
= 40V, V
GS
= 0V
V
GS
= 10V, V
DS
= 20V, I
D
= 50A
T
J
= 25°C, I
F
= 50A, V
DD
= 20V
di/dt = 400A/µs
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 50A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8
Ω
V
DS
= 10V, I
D
= 50A
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
m
Ω
µA
I
D
= 50A
D
S
G