Datasheet
IRL630
Notes:
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 2.0 V T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 230 350 ns T
J
= 25°C, I
F
= 9.0A
Q
rr
Reverse Recovery Charge ––– 1.7 2.6 µC di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 4.6mH
R
G
= 25Ω, I
AS
= 9.0A. (See Figure 12)
I
SD
≤ 9.0A, di/dt ≤ 120A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V V
GS
= 0V, ID = 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.40 V
GS
= 5.0V, I
D
= 5.4A
––– ––– 0.50 V
GS
= 4.0V, I
D
= 4.5A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 4.8 ––– ––– S V
DS
= 50V, I
D
= 5.4A
––– ––– 25 V
DS
= 200V, V
GS
= 0V
––– ––– 250 V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 10V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -10V
Q
g
Total Gate Charge ––– ––– 40 I
D
= 9.0A
Q
gs
Gate-to-Source Charge ––– ––– 5.5 nC V
DS
= 160V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 24 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 8.0 ––– V
DD
= 100V
t
r
Rise Time ––– 57 ––– I
D
= 9.0A
t
d(off)
Turn-Off Delay Time ––– 38 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 33 ––– R
D
= 11Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1100 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 220 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
––– ––– 36
––– ––– 9.0
A
ns
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
D
Internal Drain Inductance ––– 4.5 –––
L
S
Internal Source Inductance ––– 7.5 –––
nH
nA
µA
R
DS(ON)
Static Drain-to-Source On-Resistance
Ω