Datasheet
IRL1004
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.0065 V
GS
= 10V, I
D
= 78A
––– ––– 0.009 V
GS
= 4.5V, I
D
= 65A
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 63 ––– ––– S V
DS
= 25V, I
D
= 78A
––– ––– 25 V
DS
= 40V, V
GS
= 0V
––– ––– 250 V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 100 I
D
= 78A
Q
gs
Gate-to-Source Charge ––– ––– 32 nC V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 43 V
GS
= 4.5V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 16 ––– V
DD
= 20V
t
r
Rise Time ––– 210 ––– I
D
= 78A
t
d(off)
Turn-Off Delay Time ––– 25 ––– R
G
= 2.5Ω, V
GS
= 4.5V
t
f
Fall Time ––– 14 ––– R
D
= 0.18Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 5330 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 1480 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
D
Internal Drain Inductance ––– 4.5 –––
L
S
Internal Source Inductance ––– 7.5 –––
R
DS(on)
Static Drain-to-Source On-Resistance
µA
ns
S
D
G
Source-Drain Ratings and Characteristics
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
≤78A, di/dt ≤ 370A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
Starting T
J
= 25°C, L =0.23mH
R
G
= 25Ω, I
AS
= 78A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip #93-4
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 78A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 78 120 ns T
J
= 25°C, I
F
= 78A
Q
rr
Reverse Recovery Charge ––– 180 270 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
130
520
A
nH
Ω