Datasheet

IRGS/SL4062DPbF
6 www.irf.com
Fig. 19 - Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; I
F
= 24A; T
J
= 175°C
Fig. 20 - Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 23 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. V
GE
I
CE
= 24A; L = 600µH
Fig. 21 - Typ. Diode E
RR
vs. I
F
T
J
= 175°C
Fig. 22 - V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
0 500 1000 1500
di
F
/dt (A/µs)
5
10
15
20
25
30
35
40
45
I
R
R
(
A
)
0 10 20 30 40 50 60
I
F
(A)
0
200
400
600
800
1000
E
n
e
r
g
y
(
µ
J
)
R
G
= 10Ω
R
G
= 22Ω
R
G
= 47Ω
R
G
= 100Ω
8 1012141618
V
GE
(V)
4
6
8
10
12
14
16
T
i
m
e
(
µ
s
)
40
80
120
160
200
240
280
C
u
r
r
e
n
t
(
A
)
0 20 40 60 80 100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 300V
V
CES
= 400V
0 500 1000 1500
di
F
/dt (A/µs)
500
1000
1500
2000
2500
3000
3500
4000
Q
R
R
(
µ
C
)
10
Ω
22
Ω
100
Ω
47
Ω
24A
48A
12A