Datasheet

IRGS/SL4062DPbF
4 www.irf.com
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
0 1 2 3 4 5 6 7 8
V
CE
(V)
0
10
20
30
40
50
60
70
80
90
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0
V
F
(V)
0
20
40
60
80
100
120
I
F
(
A
)
-40°c
25°C
175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A
0 5 10 15
V
GE
(V)
0
20
40
60
80
100
120
I
C
E
(
A
)
T
J
= 25°C
T
J
= 175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A