Datasheet

IRGS4056DPbF
2 www.irf.com
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100µH, R
G
= 22Ω.
 This is only applied to TO-220AB package.
 Pulse width limited by max. junction temperature.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600——V
V
GE
= 0V, I
C
= 100µA
CT6
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —0.30—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C) CT6
—1.551.85
I
C
= 12A, V
GE
= 15V, T
J
= 25°C
5,6,7
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.90 — V
I
C
= 12A, V
GE
= 15V, T
J
= 150°C
9,10,11
—1.97—
I
C
= 12A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V
V
CE
= V
GE
, I
C
= 350µA
9, 10,
∆
V
GE(th)
/
∆
TJ
Threshold Voltage temp. coefficient — -18 — mV/°C
V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
11, 12
gfe Forward Transconductance — 7.7 — S
V
CE
= 50V, I
C
= 12A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current — 2.0 25 µA
V
GE
= 0V, V
CE
= 600V
—475—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 2.10 3.10 V
I
F
= 12A
8
—1.61—
I
F
= 12A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 25 38
I
C
= 12A
24
Q
ge
Gate-to-Emitter Charge (turn-on) — 7.0 11 nC
V
GE
= 15V CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 11 16
V
CC
= 400V
E
on
Turn-On Switching Loss — 75 118
I
C
= 12A, V
CC
= 400V, V
GE
= 15V CT4
E
off
Turn-Off Switching Loss — 225 273 µJ
R
G
= 22Ω, L = 200µH, L
S
= 150nH, T
J
= 25°C
E
total
Total Switching Loss — 300 391
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 31 40
I
C
= 12A, V
CC
= 400V, V
GE
= 15V
CT4
t
r
Rise time — 17 24 ns
R
G
= 22
Ω
, L = 200µH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 83 94
t
f
Fall time — 24 31
E
on
Turn-On Switching Loss — 185 —
I
C
= 12A, V
CC
= 400V, V
GE
=15V
13, 15
E
off
Turn-Off Switching Loss — 355 — µJ
R
G
=22
Ω
, L=100µH, L
S
=150nH, T
J
= 175°C CT4
E
total
Total Switching Loss — 540 —
Energy losses include tail & diode reverse recovery WF1, WF2
t
d(on)
Turn-On delay time — 30 —
I
C
= 12A, V
CC
= 400V, V
GE
= 15V 14, 16
t
r
Rise time — 18 — ns
R
G
= 22Ω, L = 200µH, L
S
= 150nH
CT4
t
d(off)
Turn-Off delay time — 102 —
T
J
= 175°C WF1
t
f
Fall time — 41 —
WF2
C
ies
Input Capacitance — 765 — pF
V
GE
= 0V 23
C
oes
Output Capacitance — 52 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 23 — f = 1.0Mhz
T
J
= 175°C, I
C
= 48A
4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 480V, Vp =600V
CT2
Rg = 22Ω, V
GE
= +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — µs
V
CC
= 400V, Vp =600V 22, CT3
Rg = 22Ω, V
GE
= +15V to 0V
WF4
Erec Reverse Recovery Energy of the Diode — 280 — µJ
T
J
= 175°C
17, 18, 19
t
rr
Diode Reverse Recovery Time — 68 — ns
V
CC
= 400V, I
F
= 12A
20, 21
I
rr
Peak Reverse Recovery Current — 19 — A
V
GE
= 15V, Rg = 22
Ω
, L =200µH, L
s
= 150nH WF3
Conditions